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光电二极管800-2550nm | 瑆创光学电子商店

Products / 光学分析 /光电探测器 /光电二极管PD(200nm-12um) /光电二极管800-2550nm /
光电二极管800-2550nm
Overview Specifications & Model Guide Spectral Graph Order Now!

Ge Photodiode (800-1800nm)

Ge germanium photodiode provides excellent linearity and responds to longer wavelengths than InGaAs detectors in DC operation. Housing a 5mm diameter active area germanium photodiode (800-1800nm), the Ge Photodiode is operated in the photovoltaic mode. The photocurrent generated by this detector is best measured using the 487 picoammeter or the 477-pre-amplifier followed by the 496 lock-in amplifier. 

Core benefits

ü  Offers excellent linearity and low noise

ü  Spectral coverage (800-1800nm)

ü  Excellent dynamic range when used with 400 Series of 

    detection electronics


Features

w  5mm diameter active region Germanium detector

w  Operated in either the DC or AC regimes

w  Suitable for free standing applications

w  Recommended for use with 400 series detection 

   electronics

IGA Photodiode (800-1700nm)

The IGA indium gallium arsenide photodiode offers optimal performance up to 1700nm. Housing a 3mm diameter active area InGaAs photodiode (800-1700nm), the IGA is operated in the photovoltaic mode. The photocurrent generated by this detector is best measured using the 487 picoammeter or the 477-pre-amplifier followed by the 496 lock-in amplifier.

Core benefits

ü Detector of choice in the near-infrared

ü Spectral coverage 800-1700nm

ü Excellent linearity and ultra-low noise

ü  High responsivity

Features

w  Housed InGaAs photodiode

w  Operated in either the DC or AC regimes

w  Suitable for free standing applications

w  Recommended for use with 400 series detection 

   electronics 

   range of options

IGA-EX_TE Photodiode (900-1900/2550nm)

The IGA-EX_TE indium gallium arsenide photodiode extends the high responsivity and excellent performance of the IGA InGaAs further into the infrared to 2500nm. Housing a 3mm diameter active area extended InGaAs photodiode (900-1900/2500nm), the IGA-EX is operated in the photovoltaic mode. Using an optically chopped input, the signal generated by this detector is best measured in using the 477 trans-impedance pre-amplifiers followed by the 496 DSP lock-in amplifier. 

Core benefits

ü Takes the excellent performance of InGaAs to longer 

    wavelengths

ü  Spectral coverage 900-1900/2500nm

ü  High responsivity

ü    Excellent linearity

Features

w Housed extended InGaAs photodiode

w  3mm diameter active area

w  Operated in AC mode

w  Suitable for free standing applications

w  Recommended for use with 400 series detection electronics



Please check the table below for individual specifications tied to individual products.

                                                                                              Products Brochure Links: Ge | IGA | IGA-EX_TE


Detector ModelGe Photodiode (800-1800nm)IGA Photodiode (800-1700nm)IGA-EX_TE Photodiode (900-1900/2550nm)
MaterialGermaniumIndium gallium arsenideIndium Gallium Arsenide
Active area5mm   diameter3mm diameter3mm diameter
Spectral response range800-1800nm800-1700nm (800-1650nm for DH_IGA_3_TE)800-1700nm (800-1650nm for DH_IGA_3_TE)
Operating modePhotovoltaicPhotovoltaicPhotovoltaic
Dark current (typ.)<1pA<1pA<1pA
Shunt resistance (typ.)15kΩ5MΩ5MΩ
Peak wavelength (typ.)1500nm1.57µm1.57µm
Peak responsivity (typ.)0.90   A.W-11.07 A.W-11.07 A.W-1
NEP1.5   x 10-12 W.H-1/27 x   10-14 W.Hz-1/27 x   10-14 W.Hz-1/2
Max. photocurrentnil2mA2mA
Max. operating temperature-20   to +60°C-20 to +60°C-20 to +60°C
ConnectorBNCBNCBNC
Compatibility

4 x M3 clearance holes 

4 x M3 clearance holes 4 x M3 clearance holes
Dimensions80L x 50W x 18H   (mm)nilnil



         Ge Photodiode (800-1800nm                                   IGA Photodiode (800-1700nm)


DH_Ge Photodiode (800-1800nm)DH_IGA Photodiode (800-1700nm)



   IGA-EX_TE Photodiode (900-1900/2550nm)


DH_IGA-EX_TE Photodiode (900-1900/2550nm)




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Compare Model Drawings & Specs Availability Reference Price
(USD)
Ge Photodiode (800-1800nm)
5mm diameter germanium photodiode, Wavelength range 800-1800nm 		In Stock Request for quote
IGA Photodiode (800-1700nm)
3mm diameter indium gallium arsenide photodiode, Wavelength range 800-1700nm 		In Stock Request for quote
IGA-EX_TE Photodiode (900-1900/2550nm)
3mm diameter thermo-electrically cooled, extended indium gallium arsenide photodiode 		In Stock Request for quote

IGA-EX_TE Photodiode (900-1900/2550nm) - Parameter

IGA Photodiode (800-1700nm) - Parameter

Ge Photodiode (800-1800nm) - Parameter

IGA-EX_TE Photodiode (900-1900/2550nm) - Download

IGA Photodiode (800-1700nm) - Download

Ge Photodiode (800-1800nm) - Download

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