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IDQ Qube NIR Gated
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4-6 Weeks |
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IDQube-NIR-FR-LN-MMF
Free-running single-Photon Detector Module with MMF62.5 fiber input - low noise DCR
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4-6 Weeks |
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IDQube-NIR-FR-LN-FS
Free-running single-Photon Detector Module free-space - low noise DCR
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4-6 Weeks |
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IDQube-NIR-FR-STD-MMF
Free-running single-Photon Detector Module with MMF62.5 fiber input - standard DCR
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4-6 Weeks |
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IDQube-NIR-FR-STD-FS
Free-running single-Photon Detector Module free-space - standard DCR
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4-6 Weeks |
Request for quote |
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IDQube-NIR-GAT-LN-MMF
Fast gated single-Photon Detector Module with MMF62.5 fiber coupling - Low noise DCR
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4-6 Weeks |
Request for quote |
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IDQube-NIR-GAT-LN-FS
Fast gated single-Photon Detector Module free-space - Low noise DCR
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4-6 Weeks |
Request for quote |
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IDQube-NIR-GAT-STD-MMF
Fast gated single-Photon Detector Module with MMF62.5 fiber coupling - standard DCR
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4-6 Weeks |
Request for quote |
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IDQube-NIR-GAT-STD-FS
Fast gated single-Photon Detector Module free-space - standard DCR
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4-6 Weeks |
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Ge Photodiode (800-1800nm)
5mm diameter germanium photodiode, Wavelength range 800-1800nm
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In Stock |
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IGA Photodiode (800-1700nm)
3mm diameter indium gallium arsenide photodiode, Wavelength range 800-1700nm
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In Stock |
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IGA-EX_TE Photodiode (900-1900/2550nm)
3mm diameter thermo-electrically cooled, extended indium gallium arsenide photodiode
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In Stock |
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MCT12 Dewar-Cooled Photodiode (2-12µm)
2x2mm mercury cadium telluride photodiode, Wavelength range 2-12um
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In Stock |
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INSB Dewar-Cooled Photodiode (1-5.5μm)
3mm diameter indium antimonide photodiode, Wavelength range 1-5.5um
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In Stock |
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PBSE_TE Cooled Photodiode (1-5µm)
3x3mm thermo-electrically cooled lead selenide photodiode, Wavelength range 1-5um
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In Stock |
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PBS_TE Cooled Photodiode (1-3µm)
3x3mm thermo-electrically cooled lead sulfide photodiode, Wavelength range 1-3um
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In Stock |
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PY Pyroelectric Detector (1-30µm)
2x2mm DLATGS sensor, Wavelength range 1-30um
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In Stock |
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DH_3 Multi-Alkali Photomultiplier (200-850nm)
S20 end-window photocathode PMT, Wavelength range 200-850nm
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In Stock |
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DH_30 Multi-Alkali Photomultiplier (200-850nm)
Side-window S20 photocathode PMT, Wavelength range 200-850nm
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In Stock |
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DH_30_TE Cooled Multi-Alkali Photomultiplier (200-900nm)
Thermo-electrically cooled, side-window S20 photocathode PMT, Wavelength range 200-900nm
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In Stock |
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DH_50 Cooled Multi-Alkali Photomultiplier (200-930nm)
Thermo-electrically cooled, end-window S20 photocathode PMT, Wavelength range 200-930nm
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In Stock |
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DH_Si Silicon Photodiode (200-1100nm)
10x10mm UV enhanced silicon photodiode, Wavelength range 200-1100nm
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In Stock |
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DH_3_BI Bi-Alkali End-Window Photocathode (200-600nm)
End-window KCs photocathode bi-alkali PMT, Wavelength range 200-600nm
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In Stock |
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SPD-303
Near-infrared Single Photon Detector 900-1700nm, external trigger frequency 0.1-100MHz, internal trigger frequency 1-100MHz any integer, trigger delay adjustment 0-20ns, 10ps step, single photon detect efficiency 10%, 20% for option.
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4-6 Weeks |
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SPD-304
Near-infrared Single Photon Detector 900-1700nm, DUAL-channel, external trigger frequency 0.1-100MHz, internal trigger frequency 1-100MHz any integer, trigger delay adjustment 0-20ns, 10ps step, single photon detect efficiency 10%, 20% for option.
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4-6 Weeks |
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LA-BY01-Tube-S1-01
光谱范围:165-900nm;阴极光照灵敏度:Min:140μA/lm(Typ:250μA/lm);阳极光照灵敏度:Min:1400A/lm(Typ:2500A/lm);增益:1*10^7;暗电流:Typ:3nA(Max:50nA);
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6-8 weeks |
Request for quote |
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LA-BY01-Tube-S1-02
光谱范围:165-900nm;阴极光照灵敏度:Min:140μA/lm(Typ:250μA/lm);阳极光照灵敏度:Min:1500A/lm(Typ:2000A/lm);增益:8*10^6;暗电流:Typ:3nA(Max:50nA);光阴极材料:多碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
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LA-BY01-Tube-S1-03
光谱范围:165-870nm;阴极光照灵敏度:Min:80μA/lm(Typ:150μA/lm);阳极光照灵敏度:Min:300A/lm(Typ:500A/lm);增益:3.3*10^6;暗电流:Typ:3nA(Max:50nA);光阴极材料:多碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
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LA-BY01-Tube-S2-01
光谱范围:165-650nm;阴极光照灵敏度:Min:50μA/lm(Typ:70μA/lm);阳极光照灵敏度:Min:1000A/lm(Typ:1500A/lm);增益:2*10^7;暗电流:Typ:0.8nA(Max:3nA);光阴极材料:双碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
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LA-BY01-Tube-S2-02
光谱范围:165-650nm;阴极光照灵敏度:Min:50μA/lm(Typ:70μA/lm);阳极光照灵敏度:Min:500A/lm(Typ:800A/lm);增益:1*10^7;暗电流:Typ:0.8nA(Max:3nA);光阴极材料:双碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
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LA-BY01-Tube-S2-03
光谱范围:165-650nm;阴极光照灵敏度:Min:50μA/lm(Typ:70μA/lm);阳极光照灵敏度:Min:1000A/lm(Typ:1500A/lm);增益:2*10^7;暗电流:Typ:3nA(Max:7nA);光阴极材料:双碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
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LA-BY01-Tube-S2-04
光谱范围:165-650nm;阴极光照灵敏度:Min:25μA/lm(Typ:50μA/lm);阳极光照灵敏度:Min:200A/lm(Typ:500A/lm);增益:1*10^7;暗电流:Typ:3nA(Max:7nA);光阴极材料:双碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
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LA-BY01-Tube-S2-05
光谱范围:165-650nm;阴极光照灵敏度:Min:25μA/lm(Typ:40μA/lm);阳极光照灵敏度:Min:200A/lm(Typ:400A/lm);增益:1*10^7;暗电流:Typ:7nA(Max:50nA);光阴极材料:双碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
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LA-BY01-Tube-S2-06
光谱范围:300-650nm;阴极光照灵敏度:Min:50μA/lm(Typ:70μA/lm);阳极光照灵敏度:Min:1000A/lm(Typ:1400A/lm);增益:2*10^7;暗电流:Typ:0.8nA(Max:3nA);光阴极材料:双碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
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SIM-PMT-BK-400
探测面积:Ø8mm;波长范围:230~700nm;峰值波长:400nm;暗电流:1nA;阴极辐射灵敏度:110mA/W,阴极量子效率:34.10%;阳极辐射灵敏度:2.6*10^5A/W;增益:2.36*10^6
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SIM-PMT-BK-400(UV)
探测面积:Ø8mm;波长范围:185~700nm;峰值波长:400nm;暗电流:1nA;阴极辐射灵敏度:110mA/W,阴极量子效率:34.10%;阳极辐射灵敏度:2.6*10^5A/W;增益:2.36*10^6
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SIM-PMT-MK-400
探测面积:Ø8mm;波长范围:230~870nm;峰值波长:400nm;暗电流:1nA;阴极辐射灵敏度:77mA/W,阴极量子效率:23.87%;阳极辐射灵敏度:1.5*10^5A/W;增益:1.95*10^6
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SIM-PMT-MK-400(UV)
探测面积:Ø8mm;波长范围:185~870nm;峰值波长:400nm;暗电流:1nA;阴极辐射灵敏度:77mA/W,阴极量子效率:23.87%;阳极辐射灵敏度:1.5*10^5A/W;增益:1.95*10^6
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SIM-PMT-MK-630
探测面积:Ø8mm;波长范围:300~920nm;峰值波长:630nm;暗电流:10nA;阴极辐射灵敏度:78mA/W,阴极量子效率:15%;阳极辐射灵敏度:7.8*10^4A/W;增益:1*10^6
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SIM-PMT-BK-420
探测面积:Ø25mm;波长范围:300~650nm;峰值波长:420nm;暗电流:1nA;阴极辐射灵敏度:80mA/W,阴极量子效率:24%;阳极辐射灵敏度:2.5*10^3A/W;增益:3.13*10^4
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SIM-PMT-GAP-520
探测面积:Ø5mm;波长范围:300~740nm;峰值波长:520nm;暗电流:3nA;阴极辐射灵敏度:189mA/W,阴极量子效率:45%;阳极辐射灵敏度:3.8*10^5A/W;增益:2*10^6
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STN6011
Microchannel Plate - Photomultiplier, Spectral Response 115-320nm, Quantum Efficiency Peak Wavelength Typ. 250nm, QE Typ. 15%@250nm, Radiant Sensitivity Typ. 30mA/W@250nm, Supply Voltage Typ.1800V, Gain 1×10^6, Dark Count Rate@0.2pe Typ. 500Hz, Rise Time Typ.1.2ns
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6-8 weeks |
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STN6012
Microchannel Plate - Photomultiplier, Spectral Response 290-650nm, Quantum Efficiency Peak Wavelength Typ. 380nm, Luminous Sensitivity Typ. 70μA/lm, QE @410nm Typ. 22%, Supply Voltage Typ.2500V, Gain Typ.1 × 10^6, Dark Count Rate@0.2pe Typ.1000Hz, Rise Time Typ.180ps
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6-8 weeks |
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STN6014
Microchannel Plate - Photomultiplier, Spectral Response 290-650nm, Quantum Efficiency Peak Wavelength Typ. 380nm, QE Typ. 22@410nm, Luminous Sensitivity Typ. 70μA/lm, Radiant Sensitivity Typ. 72mA/W@410nm, Supply Voltage Typ.1800V, Gain 1×10^6, Dark Count Rate@0.2pe Typ. 1000Hz, Rise Time Typ.1.2ns
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6-8 weeks |
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STN6015
Microchannel Plate - Photomultiplier, Spectral Response 290-650nm, Quantum Efficiency Peak Wavelength Typ.380nm, Luminous Sensitivity Typ. 70μA/lm, QE @410nm Typ. 22%, Radiant Sensitivity@410nm Typ. 72mA/W, Supply Voltage Typ. 1700, Gain 1×10^6, Dark Count Rate@0.2pe(Single Anode) Typ. 1000Hz, Rise Time 250ps
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6-8 weeks |
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STN6021
Microchannel Plate - Photomultiplier, Spectral Response 290-650nm, Quantum Efficiency Peak Wavelength Typ.380nm, Luminous Sensitivity Typ. 70μA/lm, QE @410nm Typ. 22%, Radiant Sensitivity@410nm Typ. 72mA/W, Supply Voltage Typ.2500V, Gain 2×10^6, Dark Count Rate@0.2pe(Single Anode) Typ. 500Hz, Rise Time 300ps
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6-8 weeks |
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STN6082
Microchannel Plate - Photomultiplier, Diameter 8", Spectral Range 290-650nm, QE Peak Wavelength Typ. 380nm, Photocathode Integral luminious Typ. 90A/lm, @410nm/QE Typ. 30%, Supply voltage Typ.1750V, Gain Typ. 1×10^7, Anode Sensitivity 900A/lm, Rise Time 4ns
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6-8 weeks |
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STN6201
Microchannel Plate - Photomultiplier, Diameter 20", Spectral Range 290-650nm, QE Peak Wavelength Typ. 380nm, Photocathode Integral luminious Typ. 90A/lm, @410nm/QE Typ. 30%, Supply voltage Typ.1750V, Gain Typ. 1×10^7, Anode Sensitivity 900A/lm, Rise Time 1.4ns
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6-8 weeks |
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STN6203
Microchannel Plate - Photomultiplier, Diameter 20", Spectral Range 290-650nm, QE Peak Wavelength Typ. 380nm, Photocathode Integral luminious Typ. 90A/lm, @410nm/QE Typ. 30%, Supply voltage Typ.1900V, Gain Typ. 1×10^7, Anode Sensitivity 900A/lm, Rise Time 1.4ns
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6-8 weeks |
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STM3111
Scintillator Probe, Application Voltage 0~+1250V, PMT Diameter 1", Effective Size of Scintillator Φ25×25mm, Interface Type BNC SHV, Energy Resolution ≤8.5%,
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6-8 weeks |
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STM3112
Scintillator Probe, Application Voltage 0~+1250V, PMT Diameter 2", Effective Size of Scintillator Φ50×50mm, Interface Type BNC SHV, Energy Resolution ≤8.5%,
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6-8 weeks |
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STM3113
Scintillator Probe, Application Voltage 0~+1250V, PMT Diameter 3", Effective Size of Scintillator Φ75×75mm, Interface Type BNC SHV, Energy Resolution ≤8.5%,
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6-8 weeks |
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STM3021
Nal Scintillator Detector, Input Voltage +11.5~+12.5V, Max.Input Current 50mA, Effective Size of Scintillator Φ25×25mm, Output Signal Polarity Negative, Output Signal Amplitude 1V, Output Signal Amplitude 6V, Energy Resolution ≤8.5%
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6-8 weeks |
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STM3022
Nal Scintillator Detector, Input Voltage +11.5~+12.5V, Max.Input Current 50mA, Effective Size of Scintillator Φ50×50mm, Output Signal Polarity Negative, Output Signal Amplitude 1V, Output Signal Amplitude 6V, Energy Resolution ≤8.5%
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6-8 weeks |
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STM3023
Nal Scintillator Detector, Input Voltage +11.5~+12.5V, Max.Input Current 50mA, Effective Size of Scintillator Φ75×75mm, Output Signal Polarity Negative, Output Signal Amplitude 1V, Output Signal Amplitude 6V, Energy Resolution ≤8.5%
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6-8 weeks |
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STM1111
β Detector, Input Voltage +11.5~ + 12.5V, Max Input Current 70mA, Effective Area Φ10mm, Output Pulse Logic +TTL, Output Pulse Amplitude 5±0.5V, Output Pulse Width 500±100ns, Background Counting Rate Max. 3 s^-1, Observed Counting Rate 8.8-9k s^-1, 1 Hour Instability Typ. 0.2%
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6-8 weeks |
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STM3013
β Detector, Input Voltage +11.5~ + 12.5V, Max Input Current ≤60mA(+12V); ≤10mA(-12V), Effective Area Φ25mm, Output Pulse Llogic TTL, Output Pulse Amplitude 5±0.2V, Output Pulse Width 500±100ns, Background Counting Rate Max. 3 s^-1, Observed Counting Rate 26.5-28k s^-1, 1 Hour Instability Typ. 0.2%
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6-8 weeks |
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STD317-11
Photomultiplier Tube Accessories - High Voltage Tube Socket for Side Window, Suitable Photomultiplier Tube Side-on PMT, Input Voltage +15±1V, Input Current 80(Max)mA, Output Voltage 0~-1250V, Voltage Control Mode 0~+5V or 50KΩ Potentiometers, Reference Voltage 5.33V, The PMT Outputs A Linear Current Value 180µA(Typ) @-1000V
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6-8 weeks |
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STD701A-14
Photomultiplier Tube Accessories - High Voltage Tube Socket, Suitable Photomultiplier Tube Φ28mm End Window Type, Input Voltage ±15V, Input Current Max. VCC 85，VEE 20, -3dBbandwidth Typ. 8MHz, Gain Typ. 0.3V/μA（Load Impedance1 MΩ), Output Signal Bias Typ. 10mV, Output Signal Noise/Ripple Max. 10mV
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6-8 weeks |
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STD454-01
Photomultiplier Tube Accessories - Voltage Power Supply, Input Voltage Range +11.5~+12.5V, Input Current 16mA(Typ), Output Voltage Range 0~-1250V, Ensure Output Voltage Range -200~-1250V, Current Output 0.5mA(Max), Input Regulation 0.01%(Max), Load Regulation 0.01%(Typ)
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6-8 weeks |
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STD454-02
Photomultiplier Tube Accessories - Voltage Power Supply, Input Voltage Range +11.5~12.5V, Input Current 16mA(Typ), Output Voltage Range 0~+1250V, Ensure Output Voltage Range 200~+1250V, Current Output 0.5mA(Max), Input Regulation 0.01%(Max), Load Regulation 0.01%(Typ)
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6-8 weeks |
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STM4011
Counting Unit, Input Channel Channel 1, Input Signal Level 3.3VTTL（Compatible with 5VTTL levels), Signal Pulse Width ≥10ns, Input Impedance 50Ω, Count Mode Gating, Maximum Counting Rate 5×10^7S^-1, Maximum Counting Value 232, Gated Time Range 10~655350ms, Pulse Resolution Time 0~255ns
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6-8 weeks |
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LA-BY01-H1-2002
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm；增益：Min:1*10^6/Typ:5*10^6；暗电流：Min:1/Typ:15 nA
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4-6周 |
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LA-BY01-H1-2016
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm;增益：Typ:4*10^6；暗电流：Typ:2/Max:10 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H1-2017
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm;增益：Typ:7*10^6；暗电流：Typ:3/Max:20 nA
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6-8 weeks |
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LA-BY01-H1-2018
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm;增益：Typ:5*10^5(@25℃)；暗电流：Typ:0.1(@25℃) /Max:10(@25℃)/Max:1000(@175℃) nA
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6-8 weeks |
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LA-BY01-H1-2021
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm;增益：Typ:1*10^5 ；暗电流：Typ:5/Max:10 nA
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4-6week |
Request for quote |
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LA-BY01-H2-2013-A
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm;增益：Typ:7*10^6 ；暗计数率：Max:140 Hz；暗电流：Typ:2/Max:10 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H2-2013-B
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm;增益：Typ:7*10^6 ；暗计数率：Max:300 Hz；暗电流：Typ:2/Max:10 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H2-2013-C
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm;增益：Typ:7*10^6 ；暗计数率：Max:1000 Hz；暗电流：Typ:2/Max:10 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H2-2014-A
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm; 阳极灵敏度：Min:400；暗计数率：Max:100 Hz；暗电流：3 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H2-2014-B
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm; 阳极灵敏度：Min:200；暗计数率：Max:500 Hz；暗电流：5 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H2-2014-C1
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm; 阳极灵敏度：Min:300/Typ:800；暗电流：10 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H2-2014-C2
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm; 阳极灵敏度：Min:100；暗电流：30 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H2-2014-D
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm; 阳极灵敏度：Min:50；暗电流：30 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H3-4021A
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm;增益：Typ:2.5*10^7；暗电流：Max:30 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H3-4021B
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm;增益：Typ:1.6*10^7；暗电流：Max:50 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H3-4021C
波长范围：290-650 nm；峰值量子效率对应的波长：380 nm;增益：Typ:1*10^7；暗电流：Max:100 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H3-4022
波长范围：290-650 nm；峰值量子效率对应的波长：420 nm;蓝光灵敏度：Min :8/Typ:10 μA/lmf;增益：Typ:2.73*10^5；暗电流：Typ:2/Max:30 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H3-4031
波长范围：290-650 nm；峰值量子效率对应的波长：420 nm;蓝光灵敏度：Min :10/Typ:11.5 μA/lmf;增益：Typ:2.73*10^5；暗电流：Typ:2/Max:30 nA
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6-8 weeks |
Request for quote |
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LA-BY01-H4-2031
波长范围：290-650 nm；QE@410nm：Typ:28%;QE@450nm:Typ:28%;增益：Typ:1*10^7；暗计数率：Typ:1500/Max:3000 Hz
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6-8 weeks |
Request for quote |
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LA-BY01-H4-2041
波长范围：290-650 nm；QE@410nm：Min:25/Typ:28%;顶部探测效率：Min:22%/Typ:24%;顶部收集效率：Typ:90%；增益：Typ:5*10^6；暗计数率：Max:1000 Hz
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6-8 weeks |
Request for quote |
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LA-CQ01-PD-10G-A
LA-CQ01-PD-10G-A，波长：1000-1700nm,3dB带宽：>10GHz,响应度：0.6@1064nm；0.8@1310nm：0.9@1550nm,探测器材料：InGaAs/PIN
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4-6周 |
$1041.12 |
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LA-CQ01-PD-10G-B
LA-CQ01-PD-10G-B，波长：700-900nm，3dB带宽：>10GHz，响应度：0.4@780nm；0.5@850nm，探测器材料：GaAs/PIN
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4-6周 |
$1281.38 |
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LA-CQ01-PD-20G-A
LA-CQ01-PD-20G-A，波长：1000-1700nm，3dB带宽：>20GHz，响应度：0.6@1064nm；0.8@1310nm：0.85@1550nm，探测器材料：InGaAs/PIN
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4-6周 |
$1281.38 |
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LA-CQ01-PD-20G-B
LA-CQ01-PD-20G-B，波长：700-900nm，3dB带宽：>20GHz，响应度：0.4@780nm；0.5@850nm，探测器材料：GaAs/PIN
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4-6周 |
$1061.73 |
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LA-CQ01-PD-40G-A
LA-CQ01-PD-40G-A，波长：1000-1700nm，3dB带宽：>35GHz，响应度：0.4@1064nm；0.6@1310nm：0.7@1550nm，探测器材料：InGaAs/PIN
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4-6周 |
$3203.46 |
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LA-CQ01-PD-70G-A
LA-CQ01-PD-70G-A，波长：1000-1700nm，3dB带宽：>65GHz，响应度：0.5@1310nm：0.6@1550nm，探测器材质：InGaAs/PIN
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4-6周 |
$5956.43 |
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LA-CQ01-PR-200K-A
LA-CQ01-PR-200K-A，波长范围：900-1700 nm，3dB带宽：DC-200 KHz，感光面：75 um，增益：5×10^6 V/W，NEP：4.5 pw∕Hz^ 1∕2，饱和功率：-30dBm
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4-6周 |
$640.69 |
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LA-CQ01-PR-200K-B
LA-CQ01-PR-200K-B，波长范围：320-1000 nm，3dB带宽：DC-200 KHz，感光面：1.2mm，增益：2.5×10^6 V/W，NEP： 9pw∕Hz^1 ∕2，饱和功率：-27dBm
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4-6周 |
$640.69 |
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LA-CQ01-PR-10M-A
LA-CQ01-PR-10M-A，波长范围：900-1700 nm，3dB带宽：DC-10MHz，感光面：75 um，增益：2×10^5 V/W，NEP：11 pw∕Hz^1 ∕2，饱和功率：-15 dBm
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4-6周 |
$640.69 |
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LA-CQ01-PR-10M-B
LA-CQ01-PR-10M-B，波长范围：320-1000 nm，3dB带宽：DC-10MHz，感光面：1.2mm，增益：1×10^5 V/W，NEP：22pw∕Hz^1∕ 2，饱和功率：-12dBm
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4-6周 |
$640.69 |
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LA-CQ01-PR-200M-A
LA-CQ01-PR-200M-A，波长范围：900-1700 nm，3dB带宽：DC-200 MHz，感光面：75um，增益：1.8×10^4 V/W，NEP：14 pw∕Hz^1 ∕2，饱和功率：-8dBm
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4-6周 |
$720.78 |
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LA-CQ01-PR-200M-B
LA-CQ01-PR-200M-B，波长范围：320-1000 nm，3dB带宽：DC-200MHz，感光面：800um，增益：9×10^3 V/W，NEP：28 pw∕Hz^1∕ 2，饱和功率：-5dBm
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4-6周 |
$720.78 |
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LA-CQ01-PR-500M-A
LA-CQ01-PR-500M-A，波长范围：900-1700 nm，3dB带宽：DC-500 MHz，感光面：75 um，增益：1.5×10^3 V/W，NEP：6 pw∕Hz^ 1∕2，饱和功率：0dBm
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4-6周 |
$800.86 |
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LA-CQ01-PR-500M-B
LA-CQ01-PR-500M-B，波长范围：320-1000 nm，3dB带宽：DC-500 MHz，感光面：400um，增益：0.8×10^3 V/W，NEP：11.2 pw∕Hz^1 ∕2，饱和功率：3dBm
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4-6周 |
$800.86 |
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LA-CQ01-PR-1G-A
LA-CQ01-PR-1G-A，波长范围：900-1700 nm，3dB带宽：50K-1 GHz，感光面：75 um，增益：1×10^3 V/W，NEP：50 pw∕Hz^ 1∕2，饱和功率：2dBm
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4-6周 |
$961.04 |
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LA-CQ01-PR-1G-B
LA-CQ01-PR-1G-B，波长范围：320-1000 nm，3dB带宽：50K-1 GHz，感光面：400 um，增益：500 V/W，NEP：100 pw∕Hz^1∕2，饱和功率：5dBm
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4-6周 |
$961.04 |
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LA-CQ01-PR-2G-A
LA-CQ01-PR-2G-A，波长范围：800-1700 nm，3dB带宽：50K-2 GHz，感光面：75 um，增益：1×10^3 V/W，NEP：50 pw∕Hz^ 1∕2，饱和功率：2dBm
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4-6周 |
$1121.21 |
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LA-CQ01-PR-2G-B
LA-CQ01-PR-2G-B，波长范围：400-1100 nm，3dB带宽：50K-2 GHz，感光面：150 um，增益：200 V/W，NEP：250 pw∕Hz^1∕2，饱和功率：5dBm
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4-6周 |
$1121.21 |
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LA-CQ01-BPR-200M-A-H
LA-CQ01-BPR-200M-A-H，波长范围：1310/1550(900-1700nm)，响应度：0.95@1550nm，-3dB带宽：DC-200MHz，共模抑制：>25dB，转换增益：38×10^ 3V/W，灵敏度：-26dBm，饱和功率：9dBm
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4-6周 |
$1121.21 |
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LA-CQ01-BPR-200M-A
LA-CQ01-BPR-200M-A，波长范围：1310/1550(900-1700nm)，响应度：0.95@1550nm，-3dB带宽：DC-200MHz，共模抑制：>25dB，转换增益：20×10^ 3V/W，灵敏度：-33dBm，饱和功率：-12dBm
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4-6周 |
$1121.21 |
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LA-CQ01-BPR-350M-A
LA-CQ01-BPR-350M-A，波长范围：1310/1550(900-1700nm)，响应度：0.95@1550nm，-3dB带宽：DC-350MHz，共模抑制：>25dB，转换增益：14×10^ 3V/W，灵敏度：-33dBm，饱和功率：-5dBm
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4-6周 |
$1281.38 |
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LA-CQ01-BPR-400M-A1
LA-CQ01-BPR-400M-A1，波长范围：1064(900-1400nm)，响应度：0.7@1064nm，-3dB带宽：DC-400MHz，共模抑制：>25dB，转换增益：7×10^3V/ W，饱和功率：800uW
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4-6周 |
$1601.73 |
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LA-CQ01-BPR-1G-A1
LA-CQ01-BPR-1G-A1，波长范围：1064(900-1400nm)，响应度：0.7@1064nm，-3dB带宽：500K-1GHz，共模抑制：>25dB，转换增益：28×10^3V/ W，饱和功率：500uW
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4-6周 |
$1922.08 |
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LA-CQ01-BPR-1.6G-A1
LA-CQ01-BPR-1.6G-A1，波长范围：1064(900-1400nm)，响应度：0.7@1064nm，-3dB带宽：500K-1.6GHz，共模抑制：>25dB，转换增益：22×10^ 3V/W，饱和功率：1mW
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4-6周 |
$1922.08 |
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LA-CQ01-BPR-400M-A2
LA-CQ01-BPR-400M-A2，波长范围：1310/1550(1200-1700nm)，响应度：0.9@1550nm，-3dB带宽：DC-400MHz，共模抑制：>25dB，转换增益：10×10^ 3V/W，饱和功率：400uW
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4-6周 |
$1601.73 |
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LA-CQ01-BPR-1G-A2
LA-CQ01-BPR-1G-A2，波长范围：1310/1550(1200-1700nm)，响应度：0.9@1550nm，-3dB带宽：500K-1GHz，共模抑制：>25dB，转换增益：36×10^ 3V/W，饱和功率：380uW
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4-6周 |
$1922.08 |
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LA-CQ01-BPR-1.6G-A2
LA-CQ01-BPR-1.6G-A2，波长范围：1310/1550(1200-1700nm)，响应度：0.9@1550nm，-3dB带宽：500K-1.6GHz，共模抑制：>25dB，转换增益：28× 10^3V/W，饱和功率：800uW
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4-6周 |
$1922.08 |
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LA-CQ01-BPD-10G
LA-CQ01-BPD-10G，波长范围：1000-1620nm -3dB带宽：>10GHz，共模抑制：＞20（typ.） 25），响应度：>0.9@1550nm，暗电流：<20，偏振相关损耗：<0.6dB，光回波损耗：＞25（典型值） 30）
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4-6周 |
$2562.77 |
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LA-CQ01-BPD-25G
LA-CQ01-BPD-25G，波长范围：1000-1620nm，-3dB带宽：>25GHz，共模抑制：＞20（typ.） 25，响应度：>0.8@1550nm，暗电流：<20，偏振相关损耗：<0.6dB，光回波损耗：＞25（typ. 30）
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4-6周 |
$3203.46 |
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LA-CQ01-BPD-40G
LA-CQ01-BPD-40G，波长范围：1525-1575nm，-3dB带宽：>38 GHz，共模抑制：＞15（typ.） 18，响应度：>0.45@1550nm，暗电流：＜200（typ. 5），偏振相关损耗：＜0.8（typ. 0.4，光回损：＞27
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4-6周 |
Request for quote |
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 |
LA-CQ01-APR-200M-A
LA-CQ01-APR-200M-A，波长范围：950-1700 nm，3dB带宽：DC-200MHz，探测器直径：50um，增益：180×10^3V/W，NEP：2 pw∕Hz^1∕2 ，饱和功率：-17dBm
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4-6周 |
$800.86 |
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LA-CQ01-APR-200M-B
LA-CQ01-APR-200M-B，波长范围：400-1000 nm，3dB带宽：DC-200MHz，探测器直径：1mm，增益：900×10^3V/W，NEP：0.4 pw∕Hz^1∕2 ，饱和功率：-23 dBm
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4-6周 |
$800.06 |
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LA-CQ01-APR-500M-A
LA-CQ01-APR-500M-A，波长范围：950-1700 nm，3dB带宽：DC-500MHz，探测器直径：50 um，增益：15×10^3 V/W，NEP：6 pw∕Hz^1 ∕2，饱和功率：-7dBm
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4-6周 |
$961.04 |
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LA-CQ01-APR-500M-B
LA-CQ01-APR-500M-B，波长范围：400-1000 nm，3dB带宽：DC-500MHz，探测器直径：500 um，增益：80×10^3V/W，NEP：1.1 pw∕Hz^1∕ 2，饱和功率：-13dBm
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4-6周 |
$961.04 |
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LA-CQ01-APR-1G-A
LA-CQ01-APR-1G-A，波长范围：950-1700 nm，3dB带宽：50k-1GHz，探测器直径：50um，增益：10×10^3V/W，NEP：5 pw∕Hz^1∕2 ，饱和功率：-1dBm
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4-6周 |
$1121.21 |
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LA-CQ01-APR-1G-B
LA-CQ01-APR-1G-B，波长范围：400-1000 nm，3dB带宽：50k-1GHz，探测器直径：200um，增益：50×10^3V/W，NEP：1.3 pw∕Hz^1∕2 ，饱和功率：-7 dBm
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4-6周 |
$1121.21 |
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 |
LA-SR01-Si-APD-F
光纤耦合：波长范围：200-1100nm，检测效率：45%@850nm，暗计数：200-500cps，死时间：50ns，APD 制冷温度：-20°C
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4-6周 |
Request for quote |
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LA-SR01-Si-APD-S
自由空间：波长范围：200-1100nm，检测效率：45%@850nm，暗计数：200-500cps，死时间：50ns，APD 制冷温度：-20°C
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4-6周 |
Request for quote |
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|
 |
SIM_SiPM_01A
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:1*1mm;微单元尺寸:10μm;光子探测效率:18%;微单元的个数:2880;增益:2*10^5
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2-4 weeks |
$1502.00 |
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SIM_SiPM_01B
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:1*1mm;微单元尺寸:20μm;光子探测效率:31%;微单元的个数:1296;增益:1*10^6
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2-4 weeks |
$1502.00 |
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SIM_SiPM_01C*
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:1*1mm;微单元尺寸:35μm;光子探测效率:41%;微单元的个数:504;增益:3*10^6
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12-14 weeks |
$1502.00 |
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SIM_SiPM_03B*
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:3*3mm;微单元尺寸:20μm;光子探测效率:31%;微单元的个数:10998;增益:1*10^6
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12-14 weeks |
$1553.00 |
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SIM_SiPM_03C*
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:3*3mm;微单元尺寸:35μm;光子探测效率:41%;微单元的个数:4774;增益:3*10^6
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12-14 weeks |
$1553.00 |
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SIM_SiPM_03C Super*
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:3*3mm;微单元尺寸:35μm;光子探测效率:50%;微单元的个数:5676;增益:6.3*10^6
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12-14 weeks |
$1553.00 |
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SIM_SiPM_03D
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:3*3mm;微单元尺寸:50μm;光子探测效率:47%;微单元的个数:2668;增益:6*10^6
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2-4 weeks |
$1553.00 |
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SIM_SiPM_06C*
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:6*6mm;微单元尺寸:35μm;光子探测效率:41%;微单元的个数:18980;增益:3*10^6
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12-14 weeks |
$1604.00 |
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LA-JL01-IRSPD-305-free running
波长范围：900-1700nm；外部触发频率：0.1-100MHz；单光子探测效率：10%/15%/20%/25% (可选)30%(可定制)；暗计数率：≤6E-6/gate@20%SPDE
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4-6周 |
$11532.46 |
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LA-JL01-IRSPD-305-gated
波长范围：900-1700nm；外部触发频率：0.1-100MHz；单光子探测效率：10%/15%/20%/25% (可选)30%(可定制)；暗计数率：≤6E-6/gate@20%SPDE
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4-6周 |
$11532.46 |
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SIM-PMT-GAP-660
探测面积:Ø5mm;波长范围:300~840nm;峰值波长:660nm;暗电流:3nA;阴极辐射灵敏度:133mA/W,阴极量子效率:25%;阳极辐射灵敏度:1.3*10^5A/W;增益:9.8*10^5
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联系我们 |
Request for quote |
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LA-BY01-Tube-S2-07
光谱范围:300-650nm;阴极光照灵敏度:Min:50μA/lm(Typ:70μA/lm);阳极光照灵敏度:Min:1000A/lm(Typ:1400A/lm);增益:2*10^7;暗电流:Typ:0.8nA(Max:3nA);光阴极材料:双碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
Request for quote |
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LA-BY01-Tube-S2-07
光谱范围:300-650nm;阴极光照灵敏度:Min:50μA/lm(Typ:70μA/lm);阳极光照灵敏度:Min:1000A/lm(Typ:1400A/lm);增益:2*10^7;暗电流:Typ:0.8nA(Max:3nA);光阴极材料:双碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
Request for quote |
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LA-BY01-Tube-S2-08
光谱范围:300-650nm;阴极光照灵敏度:Min:50μA/lm(Typ:70μA/lm);阳极光照灵敏度:Min:1000A/lm(Typ:1400A/lm);增益:2*10^7;暗电流:Typ:3nA(Max:7nA);光阴极材料:双碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
Request for quote |
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LA-BY01-Tube-S2-09
光谱范围:300-650nm;阴极光照灵敏度:Min:25μA/lm(Typ:50μA/lm);阳极光照灵敏度:Min:200A/lm(Typ:500A/lm);增益:1*10^7;暗电流:Typ:3nA(Max:7nA);光阴极材料:双碱;阴极面积 :8x24mm2;倍增结构:环形
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6-8 weeks |
Request for quote |
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SIM_SiPM_01B_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:1*1mm;像素尺寸:20μm;光子探测效率:31%;微单元的个数:1296;增益:1*10^6
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4-6周 |
$886.49 |
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SIM_SiPM_01C*_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:1*1mm;像素尺寸:35μm;光子探测效率:41%;微单元的个数:504;增益:3*10^6
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4-6周 |
$886.49 |
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SIM_SiPM_03B*_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:3*3mm;像素尺寸:20μm;光子探测效率:31%;微单元的个数:10998;增益:1*10^6
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4-6周 |
$937.80 |
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SIM_SiPM_03C*_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:3*3mm;像素尺寸:35μm;光子探测效率:41%;微单元的个数:4774;增益:3*10^6
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4-6周 |
$937.80 |
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SIM_SiPM_03C Super*_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:3*3mm;像素尺寸:35μm;光子探测效率:50%;微单元的个数:5676;增益:6.3*10^6
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4-6周 |
$937.80 |
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SIM_SiPM_03D_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:3*3mm;像素尺寸:50μm;光子探测效率:47%;微单元的个数:2668;增益:6*10^6
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4-6周 |
$937.80 |
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SIM_SiPM_06C*_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:6*6mm;像素尺寸:35μm;光子探测效率:41%;微单元的个数:18980;增益:3*10^6
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4-6周 |
$989.10 |
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SIM_SiPM_03B*_DC_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:3*3mm;像素尺寸:20μm;光子探测效率:31%;微单元的个数:10998;增益:1*10^6
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4-6周 |
$469.00 |
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SIM_SiPM_03C*_DC_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:3*3mm;像素尺寸:35μm;光子探测效率:41%;微单元的个数:4774;增益:3*10^6
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4-6周 |
$469.00 |
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SIM_SiPM_03C Super*_DC_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:3*3mm;像素尺寸:35μm;光子探测效率:50%;微单元的个数:5676;增益:6.3*10^6
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4-6周 |
$469.00 |
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SIM_SiPM_06C*_DC_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:6*6mm;像素尺寸:35μm;光子探测效率:41%;微单元的个数:18980;增益:3*10^6
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4-6周 |
$478.00 |
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SIM_SiPM_06C Super*_DC_OEM
光谱范围:300-950nm;峰值波长:420nm;暗电压:2mV;有效面积:6*6mm;像素尺寸:35μm;光子探测效率:50%;微单元的个数:22292;增益:6.3*10^6
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4-6周 |
$478.00 |
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